TSM1NB60SCT A3

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Overview of TSM1NB60SCT A3

Part NumberTSM1NB60SCT A3
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 600V 500MA TO92
DatasheetsDownload TSM1NB60SCT A3 Datasheet PDFPDF Icon
Price for TSM1NB60SCT A3

Specification of TSM1NB60SCT A3

Status
Obsolete
Package
Tape & Box (TB)
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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